Abstract
The development of a double beam phase sensitive method of measuring infrared Faraday rotations of the order of 0.01° is reported. Extension of the method to measurement of Voigt and Faraday ellipticity is discussed, and some results obtained by the use of these techniques on III–V semiconductors presented. An interpretation is given of the oscillatory interband Faraday rotation in InSb. The temperature dependence of free electron scattering time is deduced from combinations of Faraday rotation and ellipticity measurements on n-type InSb.
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