Influences of hydrogen ions doping on the lattice structure of AlN thin films for temperature interpretation application

Abstract

In this paper, hydrogen ions doping is used to construct lattice defects in AlN thin films. Effects of hydrogen ions doping on the lattice structure, components, and defects of AlN thin films were analyzed. SIMS results show several main types of point defects formed in hydrogen ions doped AlN thin films. XPS spectra find many nitrogen-vacancy defects on the surface of AlN thin films. These point defects make Raman scattered photons fall, thus weakening Raman scattering intensity. High-resolution TEM image shows abundant dislocation defects. Lattice defects produced by hydrogen ions doping make the lattice structure of AlN thin films stretched along the c-axis. The X-ray diffraction peak of the (002) crystal plane of the AlN thin films shifts to the left seriously. The lattice defects caused by hydrogen ions doping are repaired at high temperatures, and then the lattice of the AlN thin films shrinks, which leads to the recovery of the X-ray diffraction peak position. The X-ray diffraction angle increases linearly with temperature and time. The linear variation relationship can be used for temperature interpretation.