Abstract
To measure the surface temperature of aerospace hot-end components accurately, AlN thin film temperature measurement technology is being explored. The core of this temperature measurement technology is the evolution law of the lattice structure with temperature, but the influence of substrate on its lattice structure is still unclear. In this research, C-axis preferred orientation AlN thin films were deposited on Ni-based superalloy and quartz glass substrates by Mid-frequency reactive magnetron sputtering. The effect of substrate type on the lattice structure of annealed AlN thin films was investigated. It was found that with the increase of temperature, the lattice structure parameters (2θ) of AlN thin films deposited on Ni-based superalloy gradually shifted to the left, while those of AlN thin films deposited on quartz glass keep a constant until 1300 °C. The results reveal that quartz glass substrate has no influence on the lattice structure of AlN thin films as long as the temperature is lower than 1300 °C. Quartz glass substrates are suitable for follow-up research of AlN thin film temperature measurement technology.
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