Abstract
The present work reports the growth of (100) preferred oriented K0.35Na0.65NbO3 (KNN) thin film on Platinized Silicon substrates via pulsed laser deposition (PLD) technique. The structure of KNN thin films was examined by X-ray diffraction (XRD) technique and Raman spectroscopy while their surface morphology was analyzed by Field Emission Scanning Electron Microscope (FESEM). For interrogation of electrical properties, a metal-ferroelectric KNN- metal (MFM) structure was fabricated. Leakage current characteristics and mechanism of KNN thin film were investigated using different metals (noble metals: Pt, Au; and other metals: Pd, Al, Cr) as the top electrode. The variation in leakage current has been co-related to the different occupancy state of d shell of metals. The effect of top metal electrode on the ferroelectric and dielectric property of KNN thin film has also been studied. The MFM capacitor structure exhibited saturated P-E hysteresis loops having a saturation polarization of 43 μC/cm2 and also showed a high dielectric constant of 1090 at 1 kHz.
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