Abstract
AbstractThe present work studied the influence of thermal treatment in oxygen rich atmosphere on heterogeneous junctions in Mn‐doped SnO2 polycrystalline system presenting varistor behavior. The samples were prepared by conventional oxide mixture methodology, and were submitted to heat treatment in oxygen rich atmosphere at 900 °C for 2 h. The samples were characterized by X‐ray diffraction, scanning electron microscopy, dc and ac electrical measurements. The results showed that there is an evident relationship between the microstructure heterogeneity and non‐ohmic electrical properties. It was found that for this SnO2·MnO‐based varistor system the heat treatment in oxygen rich atmosphere does not necessarily increase the varistors' properties, which was related to the decrease in the grain boundary resistance. The results are compared with Co‐doped SnO2 varistors and ZnO based varistors. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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