Abstract
Ferroelectric films of the composition Ba0.8Sr0.2TiO3 (BST) were synthesized on platinized silicon substrates by RF sputtering. Top electrodes made of nickel, aluminum, copper and chromium were formed on the grown films by electron beam sputtering. The results of studies of the electrophysical properties of the obtained metal-dielectric-metal (MDM) heterostructures (Me-BST-Pt-Si) are presented. Keywords: ferroelectric BST films, metal-dielectric-metal (MDM) structures, microstructure, electrophysical properties.
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