The influence of the PZT buffer layer on electrophysical properties OF MDM structures with the BST film

Afanasiev M S Afanasiev M S,Belorusov D.a Belorusov D.A,Chucheva G V Chucheva G V,Kiselev D A Kiselev D A,Sivov A A Sivov A A

doi:10.21883/pss.2022.13.52318.161

The influence of the PZT buffer layer on electrophysical properties OF MDM structures with the BST film

Afanasiev M S Afanasiev M S, Belorusov D.a Belorusov D.A + Show 3 more

https://doi.org/10.21883/pss.2022.13.52318.161

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Journal: Physics of the Solid State

Publication Date: Jan 1, 2022

Affiliation: Institute of Radio-Engineering and Electronics, National University of Science and Technology

#Ba0.8Sr0.2TiO3 #Buffer Layer + Show 8 more

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Abstract

Films of the composition Ba0.8Sr0.2TiO3 (BST) were synthesized by the method of high-frequency (HF) sputtering on the buffer layer of a ferroelectric film of the composition PbZrxTi1-xO3 (PZT). Comparative results of electrophysical properties of three different metal--dielectric--metal (MDM)-structures are presented: Pt/BST/Ni, Pt/PZT/Ni, and Pt/PZT-BST/Ni. Keywords: metal--dielectric--metal structures, ferroelectric films of composition Ba0.8Sr0.2TiO3, a buffer layer, electrophysical properties.

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