Abstract
Photoluminescence experiments were performed as a function of temperature and excitation intensity in order to investigate the optical properties of In0.1Ga0.9As/GaAs quantum wells grown on vicinal GaAs(001) substrates with different miscut angles. The misorientation of the surface played an important role and influenced the intensity, efficiency, energy, and full width at half maximum of the optical emission, as well as the segregation of indium atoms. It is shown that at high temperature the optical properties of InGaAs quantum wells grown on vicinal substrates are slightly inferior to ones of the same structure grown a nominal surface because of the faster escape of the carriers.
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