Abstract
In order to investigate the dependence of indium surface segregation on step structures, InGaAs (InAs)/GaAs quantum wells (QWs) were grown by molecular beam epitaxy on vicinal GaAs(001) substrates, misoriented toward [011] and [01̄1] directions. High energy shift and narrow linewidth of photoluminescence spectra were observed for InAs QWs prepared on the [011]-stepped surface. By cross-sectional transmission electron microscope observation, it was found that broadening of InGaAs QWs was enhanced on the [011]-stepped surface. These phenomena were explained by the anisotropic segregation effect due to the difference in the step structure between the [011] step and the [01̄1] step.
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