Abstract
Optical and structural properties of In 0.15Ga 0.85As/GaAs quantum wells (100, 200 and 300 Å wide), grown by molecular beam epitaxy on nominal and vicinal GaAs(0 0 1) substrates, have been investigated by low-temperature photoluminescence, high-resolution X-ray diffraction and transmission electron microscopy. All the experimental data pointed out towards the presence of step bunching on vicinal substrate. The blueshift of the optical emissions observed in the semiconductor structure grown on the vicinal substrate was explained in terms of a simple model that includes both indium segregation and strain modulation.
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