Abstract
The formulas obtained for deconvolution of positron mean lifetime results in the sequential etching technique for detecting defect depth profiles are presented. In this experiment, only the conventional positron lifetime measurement with radioisotope-based positrons is used. The important role of the positron implantation profile is discussed. These formulas were successfully used to describe the depth profile of defects formed in sliding contact in pure vanadium. Two different layers were detected below the surface.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
