Abstract
In this letter, the effects of the interface acceptor-like traps on the transient responses of AlGaN/GaN high-electron mobility transistors (HEMTs) are investigated by means of experimental measurements and numerical simulations. The variation trends of the drain current IDS stimulated by the gate (VGS) and drain (VDS) turn-on voltage pulses have been analyzed. The successive numerical simulations are carried out on the test structure, into which a trapping region at the AlGaN/GaN interface is introduced. The same variation trends are observed on both of the simulated VGS and VDS turn-on pulse measurements. The observation proves that the interface acceptor-like trap is the factor dominating the turn-on transient response of the HEMT devices.
Published Version
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