Abstract
The influence of gg irradiation (60Co) of various intensities (Pγ≈1.7−7.5kGR/h) on the photoluminescence of GaAs:Te single crystals [n0=(1.2–2.3×1018 cm−3] is investigated. Together with the known photoluminescence impurity bands (hνmax≈1.2 eV and/or hνmax≈1.35 eV) and edge band (hνmax≈1.51 eV), new bands are also observed in the spectra at hνmax≈1.3 eV and hνmax≈1.48 eV. The observed effects are attributed to radiation-stimulated ordering of the donor impurity and deep impurity centers.
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