Abstract
The characteristics of switching diodes based on GaAs with deep impurity centers are considered. Structures of semiconductor devices are formed during controlled introduction of impurities with deep acceptor centers into n-GaAs. In the reverse branches of their current-voltage characteristics, structures have a region of a negative differential resistance (NDR) and, being switched from a high-resistance to a high-conductivity state, allow formation of electric pulses with rise times of 40–50 ps and amplitudes of up to 1000 V. Data published earlier and new results are systemized. Methods for manufacturing GaAs structures with deep centers and diodes and their main characteristics are briefly presented. The nature of the formation of NDR in such structures and the switching mechanism in the NDR region during avalanche breakdown are analyzed in detail. Examples of using S diodes in pulse engineering are presented.
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