Abstract
Si 1−xGe x nanocrystals (NCs), embedded in Al 2O 3 matrix, were fabricated on Si (100) substrates by RF-magnetron sputtering technique with following annealing procedure at 800 °C, in nitrogen atmosphere. The presence of Si 1−xGe x NCs was confirmed by grazing incidence X-ray diffraction (GIXRD), grazing incidence small angle X-ray scattering (GISAXS) and Raman spectroscopy. The influence of the growth conditions on the structural properties and composition of Si 1−xGe x NCs inside the alumina matrix was analyzed. Optimal conditions to grow Si 1−xGe x ( x∼ 0.8) NCs sized between 3 and 4 nm in Al 2O 3 matrix were established.
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