Abstract
Maskless lithography simplifies the fabrication process and reduces costs compared to electron beam (E-beam) lithography, making it a more efficient choice for patterning nano-devices. Maskless lithography presents a promising avenue for expediting device fabrication by eliminating the need for masks. This technique can streamline the production of basic electronic devices, offering an efficient and low-cost alternative to traditional lithographic methods, like E-beam lithography. This study utilized a 405 nm photodiode to achieve pattern-writing with a minimum linewidth of 1 μm. Exploring optimal parameters includes adjustments in beam intensity, scan speed, and step size. Maskless lithography was applied to 2D transition metal dichalcogenides (TMDCs) material, MoS2, to investigate their electrical transport characteristics. The fabricated device exhibits an ON/OFF ratio of ~1.7 × 106 and a mobility of ~0.833 cm2/V·s, indicating a high switching efficiency. The results demonstrate optimized maskless lithography's potential for swift and cost-effective fabrication, offering intermediate-resolution patterning capabilities.
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