Abstract
The hot-carrier effect (HCE) in different channel length NMOSFETs is studied in this letter. It is found that the HCE becomes more serious with the channel length decreasing, which results in serious degradations of the threshold voltage and saturation drain current. Moreover, the relationships of the Stress Induced Leakage Current (SILC) degradation versus the threshold voltage and worst substrate current degradations indicate that the gate leakage current is mainly caused by the damage which is induced by the hot-carrier injection (HCI) stress. Then, under the HCI stress, the SILC shift can be used to characterize the degradations as well as the damage level in NMOSFET.
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