Abstract
BiSrCaCuO thin films were grown on (1 0 0) SrTiO3 substrates by molecular beam epitaxy (MBE) with variation of the Bi deposition time. A new 2 x212 family with x varied between 1 and 0 was grown. The X-ray study, the Rutherford back scattering (RBS), reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM) were used to characterize the films. It was shown that the growth method used leads to intergrowth nanostructures. The transport measurements of BiSrCaCuO thin films were performed. The results analysed using the theory of percolation show a 2D character of conductivity in the films studied.
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