Abstract
The authors present a study of the influence of temperature on hydrogen silsesquioxane (HSQ) e-beam lithography during drying, developing, and postdevelopment baking. In accordance with the observation that tempering at relatively low temperatures can already lead to noticeable cross-linking, comparable to the effect of e-beam exposure, the authors find that decreasing the prebake temperature below 90°C and drying the HSQ resist at room temperature in vacuum yields better resolution compared with resist that was dried in a furnace or on a hotplate at 90°C or above. Developing the exposed resist not at room temperature (23°C) but at 60°C results in significant contrast enhancement. Further solidification of the developed resist is obtained by baking the material above 300°C. Correlations between these findings and IR data are presented.
Published Version
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