Abstract
AlN films were deposited by reactive magnetron sputtering with a roof-shaped Al target and conventional planar target. The c-axis orientation and the grain growth of AlN films were improved and the defects in the film were decreased, when the ion flux bombarding the film decreased. This trend was confirmed by depositing AlN films under various N2 gas pressures or external magnetic fields. These data indicate that there remains a considerable influence of ion bombardment in conventional planar magnetron sputtering, but the use of a rooftype target is effective for decreasing the exposure of the film to plasma as a result of a decrease in ion bombardment.
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