Influence of surface reconstruction on the orientation of homoepitaxial silicon films.

Abstract

Single-crystal silicon films grown at 400 \ifmmode^\circ\else\textdegree\fi{}C on Si(111):B(\ensuremath{\surd}3 \ifmmode\times\else\texttimes\fi{} \ensuremath{\surd}3 ) are rotated 180\ifmmode^\circ\else\textdegree\fi{} about the surface normal with respect to the substrate. We discuss a mechanism based on chemical effects due to the boron (\ensuremath{\surd}3 \ifmmode\times\else\texttimes\fi{} \ensuremath{\surd}3 ) reconstruction that favors the film to grow with a B-type (twin) orientation. Films grown on the Si(111)-(7\ifmmode\times\else\texttimes\fi{}7) reconstruction under identical conditions have the A-type (untwinned) orientation.