Abstract
A study of the epitaxial growth of InP on SrTiO 3(0 0 1) (STO) substrates is presented. Reflection high energy electron diffraction (RHEED) and X-ray diffraction experiments evidence the strong influence of STO surface reconstruction on the InP crystalline orientation. When grown on unreconstructed (0 0 1) STO surfaces, the InP lattice has its [1 1 1] direction perpendicular to the growth plane. When grown on (2×1) reconstructed STO surfaces, InP is (0 0 1) oriented on the (0 0 1) STO substrate. In both cases, at least one [1 1 0] InP in-plane direction is aligned to one of the [1 0 0] STO direction.
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