Abstract
A portion of the 1000°C solid solubility isotherm for Te in GaAs was determined by liquid-phase epitaxial growth of layers doped with radioactive 129 m Te. The Te concentration in the solid was varied from 2 × 10 17 to 4 × 10 19 atoms/cm 3 and was found to depend linearly on the Te atom fraction in the liquid phase. For a linear dependence, a distribution coefficient of 0·35 may be assigned to Te at 1000°C. For extrinsic conditions and dilute liquid solutions, present models for the incorporation of fully ionized impurities, which do not include surface band bending, lead to a square-root dependence of the impurity concentration in the solid on the impurity concentration in the liquid phase. Treatment of the liquid-solid interface as a metal-semiconductor Schottky barrier gives an electron concentration at the semiconductor surface which is independent of the impurity concentration in the solid, and results in a linear relationship between the concentration in the solid and liquid phase. Existing results for other impurities in GaAs and GaP suggest that it is necessary to consider surface band bending in the interpretation of other impurity III-V semiconductor systems.
Published Version
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