Abstract
Titanium dioxide (TiO2) thin films are prepared on various substrates like glass and silicon wafers by spray pyrolysis method. The spray solution is prepared by dissolving titanium-tetra isopropoxide (TTIP) in ethanol. Optical, structural and dielectric properties of these films are studied by the transmittance spectra, X-ray diffraction (XRD), atomic force microscopy (AFM), capacitance–voltage (C-V) characteristics, respectively. TiO2 metal oxide semiconductor (MOS) capacitors are fabricated using TiO2 as a dielectric medium. C-V plots are analyzed to determine the dielectric constant (εr) of TiO2 film. The dependance of εr of the TiO2 films with the substrate temperature has been investigated.
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