Influence of Si substrate orientation on stress development in Pd silicide films grown by solid-state reaction

Abstract

In situ real-time measurements of stress are performed during solid-state reaction of a palladium thin film with Si(001) or Si(111) single crystals. The stress in Pd2Si is compressive in both cases at variance with the sign of epitaxial misfit. A large difference in stress relaxation kinetics between fiber textured [on Si(001)] and epitaxial [on Si(111)] Pd2Si films is evidenced. This difference is correlated with a considerable variation in stress buildup during silicide growth. The microstructure of the growing phase is thus a key parameter for stress development during solid-state reaction.