Abstract
AbstractWe have studied the kinetics of the solid-state amorphizing reaction in thin film multilayers of Ni and Zr. Crystalline Ni and Zr films were deposited in ultra-high vacuum onto platinum resistance thermometers embedded in alumina. An electronic feedback circuit controls the temperature of the substrata by adjusting the power dissipated by the platinum resistors. We find that structural relaxation in the asdeposited Ni and Zr films affects the initial stages of the reaction. For long reaction times there is a discontinuous change in the reaction rate. The time to reach this transition increases with film thickness and depends exponentially on 1/T, with an apparent activation energy of 3 eV atom−1.
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