Evidence for a nucleation barrier in the amorphous phase formation by solid-state reaction of Ni and single-crystal Zr

Abstract

In an ultrahigh vacuum (UHV) environment, thin poly crystalline Ni films have been deposited on a Zr (112) single-crystal surface. In contrast to the case of poly crystalline Ni and Zr films, formation of amorphous Ni—Zr is not observed upon annealing at 300 °C for 11.5 h. The possible presence of an oxide or an amorphous phase diffusion barrier is ruled out and therefore the lack of a reaction must be due to a reaction barrier at the single-crystal Zr/ Ni interface. Either ion mixing of the interface with 400 keV, 5 × 1015 Xe+ /cm2, or deposition of a poly crystalline Zr layer in between the Zr single crystal and the Ni overlayer can overcome this reaction barrier. These results indicate that grain boundaries in polycrystalline Zr play an important role in amorphous Ni—Zr formation by a solid-state reaction.