Abstract
We have studied the conductance of nanoscale junctions created at a metal-semiconductor interface by the break-junction technique. The conductance traces of the nanojunctions show steps related to the formation of successive metastable configurations of a few atoms. The plateau values in the conductance traces of nanojunctions formed between a nickel tip and a doped n-type germanium surface prove dependent on the polarity of the bias voltage applied to the nanojunction. The change in the conductance is due to the formation of a Schottky barrier within the nanojunction, as confirmed by the Schottky-diode-like nonlinear current-voltage characteristics determined for metastable configurations of atoms in the nanojunctions. Thus, we demonstrate the possibility of creating an ultra-small Schottky diode at an atomic quantum point contact.
Published Version
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