Abstract
Several techniques for improving the electrical conductivity of micromachined silicon cantilevers for atomic force microscopy point contact measurements were investigated. The techniques studied included sputtering or evaporating thin layers of gold, platinum or silver onto the lower surface of the cantilever to create a conducting metal layer, and doping the cantilevers with phosphorus. It was found that the lowest resistance contacts to a gold surface can be made by the metal coated tips, which can make stable point contacts with resistances as low as 30 Ω at a tip sample force of 15 μN.
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