Influence of Sb doping on thermal properties and electrical conductivity mechanism of SbxSe50–xSn20Te30 chalcogenide glassy systems

Abstract

Tunability of thermal, and electrical characteristics of SbxSe50-xSn20Te30 (x = 2, 4, 6, and 8 at. %) bulk glass systems with varying doping concentrations are the major objective of this study. The melt quenching technique has been employed to synthesize the samples. Various thermal parameters have been inspected by using DSC measurements. The effect of Sb addition on the glass transition temperature (Tg), crystallization temperature (Tc), peak crystallization temperature (Tp), and melting temperature (Tm) have been observed from DSC thermograms. The dependence of Tg, Tc, Tp, and Tm on the heating rate has been measured. The thermal analysis is performed under non-isothermal conditions at heating rates of 5, 10, 15, and 20 K/min. The activation energies for the glass transition temperature are estimated by using the Kissinger method and are found to decrease from (211.21-168.85) KJ.mol−1. Thermal stability and glass forming ability for all glassy compositions have been examined in terms of Hruby's parameter. In addition, electrical conductivity mechanisms over vast temperature and frequency ranges are analyzed. The DC conductivity mechanism has been analyzed by deploying Mott and Greaves's variable range hopping model, while the AC conductivity mechanism has been analyzed by deploying the modified correlated barrier hopping model. AC conductivity scaling property has been examined by using the Pan and Ghosh model. The influence of Sb addition has been observed as the DC and AC conductivity increases with the increase of doping concentration.