Abstract
Influence of Sb was studies on In0.2Ga0.8As0.98N0.02/GaAs strained multiquantum wells (MQWs) structure grown by using metalorganic chemical vapor deposition. The structural properties of In0.2Ga0.8As0.98N0.02/GaAs and In0.2Ga0.8As0.98N0.02:Sb/GaAs strained MQWs were investigated by using high-resolution X-ray diffraction (HRXRD). For In0.2Ga0.8As0.98N0.02/GaAs and In0.2Ga0.8As0.98N0.02:Sb/GaAs strained MQWs, the peaks observed in the photocurrent (PC) and the photoluminescence (PL) spectra were preliminarily assigned to electron–heavy hole (e1–hh) and electron–light hole (e1–lh) fundamental excitionic transitions. Two additional transitions related to MQWs region are observed in the PC spectra other then transitions involving the ground state. In the case of In0.2Ga0.8As0.98N0.02:Sb/GaAs strained MQWs, the PL and PC peaks are blue-shifted.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call