Growth of InAs/InP and InAsP/InP heterostructures by chemical beam epitaxy

Abstract

We report for the first time that high quality pseudomorphically strained InAs 1- x P x /InP and InAs/InP (3% lattice mismatch) superlattices (SL) and strained multi-quantum wells (SMQWs) can be grown by chemical beam epitaxy (CBE). Structural properties and interface sharpness are investigated as a function of growth temperature within a range of 420 to 540°C. Interface sharpness, determined through the high resolution X-ray diffraction analysis of thin (1–5 monolayers) InAs single and multi-quantum well structures, is found to be better than 1 monolayer over a wide range of growth temperatures (450–490°C) and high quality SMQWs and SLs were achieved. Moreover, no temperature dependent variation of thicknesses (growth rates) was observed within the 440–500°C temperature range. The As versus P incorporation ratios in ternary InAsP/InP layers were also studied, showing that CBE is perfectly suited for a successful control of As composition in such heterostructures. Finally, the structural and optical properties of grown heterostructures, as studied with high resolution X-ray diffraction, RHEED and low temperatures photoluminescence analysis, indicate that pseudomorphic InAsP/InP and InAs/InP SMQWs are compatible with long wavelength (1 to 2 μm) opto-electronic applications.