Abstract
The influence of rapid thermal annealing on the properties of GaInAs strained quantum well lasers is studied. Photoluminescence performed at 300 and 77 K shows that an optimum is found for annealing at 800°C-10 s. The threshold current density of the laser decreases by a factor of 2 to 3 while its internal quantum efficiency increases from 30% up to 60%. The origin of the non radiative traps involved in the process is discussed.
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