Abstract
Ta-doped In2O3 transparent conductive oxide films were deposited on glass substrates using radio-frequency (RF) sputtering at 300°C. The influence of post-annealing on the structural, morphologic, electrical and optical properties of the films was investigated using X-ray diffraction, field emission scanning electron microscopy, Hall measurements and optical transmission spectroscopy. The obtained films were polycrystalline with a cubic structure and were preferentially oriented in the (222) crystallographic direction. The lowest resistivity, 5.1×10−4 Ω cm, was obtained in the film annealed at 500°C, which is half of that of the un-annealed film (9.9×10−4 Ω cm). The average optical transmittance of the films was over 90%. The optical bandgap was found to decrease with increasing annealing temperature.
Highlights
Ta-doped In2O3 transparent conductive oxide films were deposited on glass substrates using radio-frequency (RF) sputtering at 300°C
The average optical transmittance of the films was over 90%
The optical bandgap was found to decrease with increasing annealing temperature
Summary
SPECIAL TOPICS: Influence of post-annealing on the properties of Ta-doped In2O3 transparent conductive films Ta-doped In2O3 transparent conductive oxide films were deposited on glass substrates using radio-frequency (RF) sputtering at 300°C. The influence of post-annealing on the structural, morphologic, electrical and optical properties of the films was investigated using X-ray diffraction, field emission scanning electron microscopy, Hall measurements and optical transmission spectroscopy. Transparent conductive films, transparent semiconductors, Hall measurement, optical bandgap, radio-frequency sputtering
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