Abstract
High quality transparent conductive In-doped nano-ZnO thin films with In content of 2 at% were prepared by RF magnetron sputtering. The effect of substrate temperature on the structure, electrical and optical properties of nano-ZnO thin films was investigated by XRD, Hall measurement and optical transmittance spectroscopy. It shows that all the films are polycrystalline with hexagonal wurtzite structure and c-axis is perpendicular to the substrate. The grain size of the films changed from 22.4 to 28.7 nm with different substrate temperatures. The lowest resistivity of the films obtained is 3.18×10−3 Ω⋅cm as the growth temperature is 100 °C. The transmittance of all the films is about 85% in the visible region, and the optical band gap is in the range of 3.40∼3.45 eV.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
