Abstract
The process of r.f. diode sputtering from a Si 3N 4 target was investigated at various partial pressures of oxygen P 0 in argon sputter gas. It was shown by IR spectroscopy that Si 3N 4, SiO x N y and SiO 2 films can be produced depending upon the P 0 value. For each case the corresponding intervals of oxygen pressures were determined. Refractive index and chemical etching rates of the prepared films in BHF were measured.
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