Abstract
In this study, the influence of the oxygen/argon (O2/Ar) flow ratio on aluminum-doped zinc oxide (ZAO) films using a Zn1.22Al0.02O1.25 target was investigated systematically. Different samples were obtained by changing the O2/Ar flow ratio from 0.11 to 3. The grain size first decreased and then increased as the O2/Ar flow ratio increased, reaching a minimum size of 8.53nm at a flow ratio of 1. All films showed different average transmittances above 400nm because of different surface structures and film thicknesses; the thickness of films varied from 261 to 897nm. Moreover, the ZAO films exhibited different optical bandgaps between 3.22eV and 3.31eV. The resistivity first increased from 2.1×10−4Ωcm to 350×10−4Ωcm and then decreased to 220×10−4Ωcm with increasing O2/Ar flow ratio. Both the carrier concentration and Hall mobility first decreased from 5.6×1020cm−3 to 0.3×1020cm−3 and from 3.9cm2/Vs to 0.6cm2/Vs, respectively, and then increased to 0.9×1020cm−3 and 1.1cm2/Vs, respectively, with increasing O2/Ar flow ratio.
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