Abstract
The influence of native oxide on the oxygen concentration in Czochralski-grown silicon (CZ-Si) wafers has been studied by p-polarized Brewster angle incidence infrared spectroscopy (PPBIR). It was found that the oxygen concentration changed only slightly (within 1%) by observation of the vibration bands of the native oxide which are located near the oxygen vibration band at 1106 cm-1.
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