Abstract
High-quality GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma-enhanced metal organic chemical vapour deposition (ECR-PEMOCVD). Trimethyl gallium (TMGa) and N2 are applied as precursors and different N2 fluxes are used to achieve high-quality GaN films. The influence of N2 flux on the properties of GaN films is systematically investigated by X-ray diffraction analysis (XRD), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM) and Hall effect measurement (HL). The results show that the high-quality GaN films with small surface roughness of 4.5 nm and high c-orientation are successfully achieved at the optimized N2 flux of 90sccm. The most significant improvements in morphological, structural, and optical properties of GaN films are obtained by using a proper N2 flux.
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