Abstract
GaN films were deposited on metal Ni substrates using electron cyclotron resonance plasma-enhanced metal organic chemical vapour deposition system (ECR-PEMOCVD). The nitridation time dependent structural and morphological characteristics of GaN films were systematically investigated by reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), and scanning electron microscope (SEM) analysis. The results indicate that it is feasible to deposit GaN films on Ni metal substrate under the proper deposition procedures. The high quality GaN films with c-axis preferred orientation and dense and uniform microstructure are successfully obtained under the optimized nitridation time. The GaN/Ni structure has great potential for the improvement of short-wavelength optical devices with excellent heat dissipation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
