Effect of buffer layer on the structural and morphological properties of GaN films grown with ECR-PEMOCVD

Abstract

Prefer-oriented GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) at various buffer layers. Trimethyl gallium (TMGa) and N 2 are applied as precursors and various buffer layers are used to achieve high quality GaN films. The influence of buffer layers process on the properties of GaN films is systematically investigated by reflection high energy electron diffraction (RHEED), X-ray diffraction analysis (XRD) and atomic force microscopy (AFM). The results show that the high quality GaN films deposited at proper buffer layer process display the fine structural and morphological properties.