Abstract
Preferred crystal orientation and low electrical resistivity are required for ZrN x films applied in electronic devices. In this paper, effects of N 2:(N 2+Ar) flow ratio ( F(N 2)) and substrate temperature on the properties of the films deposited on glass substrate by reactive dc sputtering are investigated. In a wide range of F(N 2) (4–24%), the films show fcc NaCl structure. While for F(N 2) in the ranges of 5–12, 12–24 and >24%, the films show (1 1 1)/(2 0 0), (1 1 1) only and amorphous structures, respectively. The electrical resistivity increases with F(N 2) from 5 to 24%, and can be controlled to some extent by changing the substrate temperature.
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