Abstract
Selective epitaxy of Si 1− x Ge x /Si(100) via gas-source molecular beam epitaxy was carried out to compare facet formations in Si 1− x Ge x to Si. A single {311} facet with a pronounced cusp at the intersection with the (100) surface was observed in large windows (25 μm). However, facet formations occurring within smaller windows (≤5 μm) show the development of {311}- and {111}- type facets. For the 1–2 μm features, no cusps were observed, and facet growth was initiated at an earlier stage of development, avoiding contact with the SiO 2 mask. While a 1400 Å Si epilayer is expected to have a {311}/{111} ratio of much less than one (∼0.15), for the 1–2 μm windows, however, it is ∼2. The persistence of the {311}-type facet offers a faster reduction of the original (100) surface that facilitates the fabrication of a nanoscale template.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call