Influence of masking coatings geometric parameters on the manufacturing precision of semiconductor diodes disks-crystals

Abstract

Considered is the qualification feature of dimensional abrasive jet processing when cutting masked semiconductor substrates on a silicon base into round discs-crystals. This approach is used when dividing stacked substrates into crystal disks, which have a tapered side surface and, accordingly, a difference in the size of the diameters at the ends of the crystal. The process of the formation of crystal disks is described and the dependence of the crystal taper on the masking method and the parameters of jet-abrasive processing is revealed. It is shown that crystal disks of the same size with a minimum taper can be obtained by increasing the processing time, manufacturing masking disks from wear-resistant materials, and choosing the optimal distance between the masking disks taking into account the substrate thickness.