Abstract
Influence of light-soaking temperature on the formation of photocreated neutral dangling bonds (DBs) in hydrogenated amorphous silicon is investigated by light soaking at 77 K, room temperature (RT) and 90°C. Distributions of thermal annealing activation energies for the DBs photocreated at the three temperatures are obtained. The effect of light-soaking temperature on the increase rate of DBs and on the distribution of thermal annealing activation energies can be self-consistently fitted using two different rate equations. One contains a photocreation term, a thermal annealing term and a light-induced annealing term. The other has a photocreation term and a thermal annealing term modified by the light-induced annealing effect. The former rate equation can explain the very high density of photocreated DBs, while the latter can explain the recent result of light-induced annealing.
Published Version
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