Abstract
The chemical composition of the surfaces and surface layers of Si samples used in solar cells are studied using Auger electron spectroscopy (AES). It is shown that the low-energy implantation of Ba and O ions leads to the redistribution of impurity atoms in the surface layer and can prevent impurity atoms adsorbed onto the surface from penetrating inside the sample.
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Schedule a callMore From: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
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