Doping and characterization of impurity atoms in Si and Ge nanowires

Abstract

AbstractSi and Ge nanowires (SiNWs and GeNWs) are of great interest due to their novel physical properties. They are considered to be desirable materials for the next‐generation metal‐oxide semiconductor field‐effect transistors (MOSFETs) and solar cells. Impurity doping is one of the important techniques to functionalize SiNWs and GeNWs. The crucial point is how the states of impurity atoms can be clarified. In order to realize it, we applied Raman scattering, electron spin resonance, and x‐ray diffraction methods. These results showed that B and P atoms were doped and electrically activated in SiNWs and GeNWs, showing the formation of p‐type and n‐type NWs. Recently, Si/Ge and Ge/Si core‐shell NWs were grown and the site‐selective doping was demonstrated. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)