Abstract
We demonstrate reversible switching of the resistance of Cu/Cu–SiO2/TaN cells with and without an interfacial tantalum oxynitride (TaON) layer. The TaN, Cu–SiO2, and Cu layers were prepared by sputter deposition, and the TaON layer was produced by plasma oxidation of the TaN surface. Both cells demonstrated bipolar switching between the high resistance state (HRS) and the low resistance state (LRS). The Cu/Cu–SiO2/TaN cell had set voltages of approximately around +1.0 V, reset voltages of approximately around -0.6 V, and resistance ratios (RHRS/RLRS) of about 6 to 8. By inserting a thin TaON layer between the Cu–SiO2 and TaN in the cell, RHRS/RLRS of the Cu/Cu–SiO2/TaON/TaN cell was increased to above 400, and the set and reset voltages were decreased to about +0.3 and -0.2 V, respectively. Adding the interfacial TaON layer also improved the endurance of the cell. Furthermore, the conduction mechanisms for the Cu/Cu–SiO2/TaN cells with and without an interfacial TaON layer were discussed.
Published Version
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