Abstract
The shapes of dislocation etch pits formed by molten KOH on {001} LEC GaAs crystal wafers doped with various degrees of In content were investigated. The pit shape was found to change depending on the amount of the doped In. The geometrical relation between the pit shapes and the direction of the composed pit walls is discussed. The formation mechanism of each wall is examined microscopically regarding the explanation of the pit-shape variation. The pit-shape variation is interpreted to be due to an increase in the etch rate in only the Ga{111} planes; this is caused by the In atoms substituting the Ga atoms.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
