Abstract

We have investigated the etching properties of p- and n-type β-FeSi 2 crystals grown from solution. Characteristic shapes of etch pits depending on the surface orientation was observed on the etched surface by using diluted hydrofluoric acid (5% of HF) and HF:HNO 3:H 2O=1:1:(2–8) solutions. However, the shapes of etch pits were independent of the conduction type and carrier density of the crystals. We also found the anisotropy of etch rates. The etch rates of the HF:HNO 3:H 2O=1:1:2 solution at 22°C were approximately 1.57, 1.43 and 1.09 μm/ min on {1 1 1} , {1 0 0} and {0 0 1} faces of p-type β-FeSi 2 crystals, respectively.

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